• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
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  • 优先权
    • 专利摘要:
    1391013 Selenium; arsenic tetraselenide BOLIDEN AB 13 March 1972 [12 March 1971] 11533/72 Heading C1A Selenium which contains between 0À1 and 2% by weight of arsenic is prepared by mixing finely divided selenium and finely divided arsenic with a maximum particle size of not greater than 30 Ám. and an atomic mixing ratio of arsenic to selenium equal to substantially 1 : 4, heating the mixture in an inert atmosphere to a temperature in the range 150‹-260‹ C. to form a master alloy comprising substantially arsenic tetraselenide and incorporating this master alloy in solid or liquid form in a melt of substantially pure selenium in a quantity such that an arsenic content of 0À1 to 29 is obtained. The master alloy may be purified of oxygen prior to its incorporation in the selenium, the arsenic tetraselenide preferably having an oxygen content of less than 5 grams per metric ton.
    公开号:SU976857A3
    申请号:SU721758329
    申请日:1972-03-10
    公开日:1982-11-23
    发明作者:Тичо Хенрикссон Стен
    申请人:Болиден Актиеболаг (Фирма)；
    IPC主号:
    专利说明:

    The invention relates to methods for producing two-component alloys and can be used to obtain alloys of selenium with arsenic, used in special equipment. 5
    Known methods for producing alloys of selenium with arsenic, which are based on direct fusion of the starting components [1].
    Closest to the proposed technical essence and the achieved effect is a method for producing an alloy of selenium with arsenic, comprising mixing the powders of the starting 15 substances and fusing them when heated to 400 ° C, which is carried out both in open and closed containers [2].
    However, it is not possible to obtain alloys of the required composition, especially for arsenic, since even being finely ground, arsenic does not completely dissolve and significantly impairs the properties of the alloys, for example, those associated with the photoelectric effect.
    The aim of the invention is to ensure the content of arsenic in the alloy of 0.1-2%.
    This goal is achieved by the fact that according to the method for producing an alloy of selenium with arsenic, which includes mixing the powders of the starting materials and fusion and * when heated, powders with a grain size of less than 30 microns with an atomic ratio of arsenic of 1: 4 are mixed, fusion is carried out at a temperature of 150- 200 ° C to obtain arsenic tetraselenide and its subsequent fusion with the calculated amount of selenium.
    The proposed intermediate compound of selenium with arsenic is then used as a ligature to obtain an alloy of a given composition. The intermediate compound, tetraselenide, has the smallest of all selenides. melting point - 150 ° C, and upon subsequent heating with selenium gives two completely miscible liquids. The optimum temperature for producing tetraselenide is 150-200 ° C, while the powders of the starting materials should be well mixed between. 5 to avoid local disproportionation and the formation of other selenides. The optimal sizes of 4θςτπ4 powders is 5 “. Μm. It is advisable to use in this case 10 powders that do not have an oxide film on the surface. This is achieved by grinding the starting materials in the protective atmosphere, for example, in an argon atmosphere.
    Example. 20 kg of selenium and 5 kg of 15 arsenic in the form of a powder with a grain size of 20-30 microns are placed in a closed vessel equipped with a mixing device. The process is carried out in an argon atmosphere with heating to 200 ° C for 20 hours. Then, the temperature is increased to 400 ° C and held for 18 hours while stirring the contents of the vessel.
    In this case, a tetraselenide melt is obtained, which is granulated by passing it through cold water. The resulting tetraselenide is fused with the calculated amount of selenium for-. radiation alloy selenium containing 0.1-2 wt.% arsenic. 'Fusion is carried out using both liquid and ground starting materials.'
    The process is conducted in a protective atmosphere.
    The invention allows to obtain selenium alloys with arsenic content of 0.1-2 wt.%.
    权利要求:
    Claims (2)
    [1]
    The invention relates to methods for producing two component alloys and can be used to make selenium alloys with mice used in special techniques. Methods are known for the preparation of selenium alloys with mice, which are based on direct fusion of the starting components 1. The closest to the proposed technical essence and the achieved effect is a method of obtaining a selenium alloy with a mouse, which includes mixing the powders of the starting materials and fusing them when heated to which is carried out in both open and closed containers 2. However, it is not possible to obtain alloys of the required composition, especially over the mouse, since, even being finely ground, the mouse does not completely dissolve and significantly degrades the properties of the alloys, such as those associated with the photoelectric effect. The aim of the invention is to provide a mouse content in the alloy of 0.1-2%. This goal is achieved by the fact that according to the method for producing an alloy of selenium with a mouse, including mixing the powders of the starting materials and fusing u; k; when heated, powders with a grain size of less than 30 µm with an atomic ratio of 1: 4 mouse are mixed, fusing is held at ISO-ZOO C to obtain mouse tetraselenide and then fusing it with the calculated amount of selenium. The proposed selenium intermediate with a mouse is then used as a ligature to produce an alloy of a given composition. The intermediate is tetraselenide. has the smallest of all selenides. melting point is 150 ° C and, upon subsequent heating with selenium, gives: 397 two completely miscible liquids The optimum temperature for obtaining tetraselenide is 150-200 ° C, while the powders of the starting materials must be well mixed between. in order to avoid local disproportionation and the formation of other selenides. The optimum size of the tea (powdered particles is µm. It is advisable to use powders that do not have an oxide film on the surface. This is achieved by grinding the starting materials in a protective atmosphere, for example, in an argon atmosphere. Ex. 20 kg of selenium and 5 kg of mouse in powder form with a grain size of 20-30 μm is placed in a closed vessel equipped with a mixing device.The process is carried out in an argon atmosphere with heating up to 20 hours. Then the temperature is raised to and kept for 18 hours while stirring the contents of the vessel. A melt of tetraselenide is melted and granulated by passing it through cold water. The resulting tetraselenide is fused with a calculated amount of selenium to produce a selenium alloy containing 0.1-2 wt.% of the mouse. The melting is carried out using both liquid and ground starting materials. The invention allows to produce selenium alloys with a mouse content of 0.1-2 wt. Formula of the invention. A method for producing an alloy of selenium with a mouse, which includes mixing the powders of the starting materials and fusing them and heating, characterized in that, in order to ensure the content of the mouse in the alloy in an amount of 0.1 to 2 May, powders with a grain size less than 30 microns with an atomic ratio of arsenic and selenium 1 :, are fused. at 150–200 ° C to obtain arsenic tetraselenide and then fusing it with the calculated amount of selenium. Sources of information taken into account in the examination 1. US patent number 28035 2, CL 177-201, published. 1957.
    [2]
    2. US patent number 2822300, cl. 177-202, published. 1958.
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    同族专利:
    公开号 | 公开日
    JPS5511602B1|1980-03-26|
    DE2210638B2|1979-01-04|
    CA967459A|1975-05-13|
    DE2210638A1|1972-09-28|
    IT953448B|1973-08-10|
    NL172047C|1983-07-01|
    US3785806A|1974-01-15|
    GB1391013A|1975-04-16|
    DE2210638C3|1979-08-30|
    SE356223B|1973-05-21|
    NL172047B|1983-02-01|
    NL7203087A|1972-09-14|
    FR2128879B1|1978-03-31|
    FR2128879A1|1972-10-20|
    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    US2863768A|1955-07-05|1958-12-09|Haloid Xerox Inc|Xerographic plate|
    FR1488186A|1965-08-02|1967-07-07|Fuji Photo Film Co Ltd|Photosensitive material for electrophotography|GB1181614A|1968-03-19|1970-02-18|Siemens Ag|Process for Producing Homogeneously Doped Selenium.|
    US4008082A|1973-02-19|1977-02-15|Licentia Patent-Verwaltungs-G.M.B.H.|Method for producing an electrophotographic recording material|
    US4126457A|1973-05-30|1978-11-21|Xerox Corporation|Evaporation technique for producing high temperature photoreceptor alloys|
    US4049505A|1974-10-14|1977-09-20|Chatterji Arun K|Photoconductors for electrostatic imaging systems|
    US4414179A|1981-12-03|1983-11-08|Xerox Corporation|Process for making photoreceptors|
    US4859411A|1988-04-08|1989-08-22|Xerox Corporation|Control of selenium alloy fractionation|
    US4822712A|1988-04-08|1989-04-18|Xerox Corporation|Reduction of selenium alloy fractionation|
    US4842973A|1988-04-08|1989-06-27|Xerox Corporation|Vacuum deposition of selenium alloy|
    US4904559A|1988-10-24|1990-02-27|Xerox Corporation|Processes for suppressing the fractionation of chalcogenide alloys|
    US4894307A|1988-11-04|1990-01-16|Xerox Corporation|Processes for preparing and controlling the fractionation of chalcogenide alloys|
    US5002734A|1989-01-31|1991-03-26|Xerox Corporation|Processes for preparing chalcogenide alloys|
    US5084301A|1990-09-04|1992-01-28|Xerox Corporation|Alloying and coating process|
    法律状态:
    优先权:
    申请号 | 申请日 | 专利标题
    SE03226/71A|SE356223B|1971-03-12|1971-03-12|
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